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| NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8 FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com * CPU Power Delivery * DC-DC Converters www..com * Low Side Switching MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25C TA = 85C TA = 25C TA = 25C Steady State TA = 85C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C, tp = 10 ms PD IDM TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 18 13 2.25 11 8 0.89 90 65 55.6 180 -55 to +150 46 6 242 W A C W A W A Unit V V A Applications RDS(ON) MAX 4.0 mW @ 10 V 6.0 mW @ 4.5 V D (5,6) ID MAX 90 A G (4) S (1,2,3) N-CHANNEL MOSFET MARKING DIAGRAM D 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 S S S G D 4836N AYWWG G D D A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 22 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION A V/ns mJ Device NTMFS4836NT1G NTMFS4836NT3G Package SO-8 FL (Pb-Free) SO-8 FL (Pb-Free) Shipping 1500 / Tape & Reel 5000 / Tape & Reel TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 July, 2006 - Rev. 1 Publication Order Number: NTMFS4836N/D NTMFS4836N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - Steady State (Note ) 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJA RqJA Value 2.25 55.6 140.8 C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient www..com Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 25 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.5 6.0 2.5 V mV/C VGS = 10 V to 11.5 V VGS = 4.5 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A 2.8 2.8 4.8 4.8 24 4.0 mW 6.0 Forward Transconductance gFS VDS = 15 V, ID = 15 A S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 14 30 20 12 8.0 27 31 7.0 ns ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V 2677 565 307 20 3.2 8.0 8.0 45 nC nC 28 pF 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4836N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.83 0.7 27.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 13.8 13.3 16 nC ns 1.2 V Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance www..com Gate Resistance tRR ta tb QRR LS LD LG RG TA = 25C 0.65 0.005 1.84 2.2 nH nH nH W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4836N TYPICAL PERFORMANCE CURVES 120 110 ID, DRAIN CURRENT (AMPS) 100 90 80 70 60 50 40 30 20 10 0 3.4 V 3.2 V 3.0 V 2.8 V 0 1 2 3 4 5 6 7 8 9 10 VGS = 4.5 to 5.0 V 110 ID, DRAIN CURRENT (AMPS) TJ = 25C 4.0 V 3.8 V 3.6 V 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 TJ = 125C TJ = -55C 4 5 6 TJ = 25C VDS 10 V www..com, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 0 2 4 6 8 10 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25C 0.008 0.007 0.006 0.005 0.004 0.003 0.002 0.001 0 10 15 20 25 30 35 40 45 50 55 60 ID, DRAIN CURRENT (AMPS) VGS = 11.5 V VGS = 4.5 V TJ = 25C Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 10 -25 0 25 50 75 100 125 150 ID = 30 A VGS = 10 V & 4.5 V IDSS, LEAKAGE (nA) 10,000 100,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1,000 TJ = 125C 100 4 8 12 16 20 24 28 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTMFS4836N TYPICAL PERFORMANCE CURVES 5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 2000 1500 1000 500 0 -15 -10 -5 0 5 VGS VDS 10 15 20 Coss 25 30 Crss Ciss Ciss TJ = 25C 12 QT 10 8 6 4 2 0 0 5 Qgs Qgd 20 18 16 14 VDS VGS 12 10 8 6 4 ID = 30 A TJ = 25C 10 15 20 25 30 35 QG, TOTAL GATE CHARGE (nC) 40 2 0 45 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) www..com GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 15 V ID = 15 A VGS = 11.5 V tf t, TIME (ns) 100 td(off) tr 10 td(on) Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 30 VGS = 0 V 25 20 15 10 5 0 TJ = 25C 1 1 10 RG, GATE RESISTANCE (W) 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1.1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 10 ms 100 ms 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 10 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 1 ms 10 ms dc 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Figure 10. Diode Forward Voltage vs. Current ID = 22 A 100 1 0.1 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTMFS4836N TYPICAL PERFORMANCE CURVES 100 I D, DRAIN CURRENT (AMPS) 125C 10 100C 125C 1 1 www..com 10 100 1000 PULSE WIDTH (ms) 10000 Figure 13. Avalanche Characteristics http://onsemi.com 6 NTMFS4836N PACKAGE DIMENSIONS SO-8 FLAT LEAD (DFN6) CASE 488AA-01 ISSUE B 2X 0.20 C D 2 D1 6 5 A B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C 4X E1 2 www..com 1 2 3 4 E c q A1 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 0.99 1.20 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 0.51 --- --- 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ DETAIL A b e/2 1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 0.10 0.05 CAB c L K E2 L1 6 5 M G D2 BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTMFS4836N/D |
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